摘要
离子注入是将具有高动能的掺杂离子引入到半导体中的一种工艺,其目的是改变半导体的载流子浓度和导电类型。将离子注入技术用于ZnO薄膜p型掺杂,其可重复性和稳定性良好。
The ion implantation is a kind of craft that it is high kinetic energy ion to semi-conductor. Its purpose to change sub-density and conduct electricity type of semi-conductor.The article presents the ion implantation technology used in the ZnO film p-type blending. The study shows that the method re-usable and stability is good.
出处
《重庆科技学院学报（自然科学版）》
CAS
2008年第1期40-42,共3页
Journal of Chongqing University of Science and Technology：Natural Sciences Edition
基金
重庆市高校光学工程重点实验室开放课题基金资助项目
