摘要
详细地介绍了一种新型实用的VDMOSET特征导通电阻的物理解析模型.该模型不仅物理概念清晰,有利于定型指导器件的研制和生产,而且简单、实用.
The relationship between the specific On - resistanceand structure parameters is systematically aralyzed in this paper, and a new - functional physical analytical model of the bar gate structure VDMOSFET is described in detail. This model is not only propitious to the study and produce of specific devices because it is clear in physics concept, but also simple and practical.
出处
《辽宁大学学报（自然科学版）》
CAS
2008年第3期197-199,共3页
Journal of Liaoning University：Natural Sciences Edition
基金
沈阳市科技局(1032029-2-06)
