摘要
本文报道采用离子注入法在Ⅲ—V半导体(GaAs,InP)中掺Er,用优良退火技术可得到效果较好的光致发光材料.
In this paper, the author reported that we can obtain the effective photolumi-nenscence (PL) material which Er-implanted Inp and GaAs are annealed using a rapidface to face thermal annealing technique.
