摘要
研究了金、钨等多种材料与硅交界时６０Ｃｏγ射线在界面硅一侧产生的深度剂量分布。将该分布与均匀硅材料中的平衡剂量比较，发现在界面附近具有明显的剂量梯度分布。特别在金等高原子序数材料与硅交界的情况下，硅界面的剂量有显著增强现象。以康普顿散射、光电、俄歇效应和次级电子的输运机制为基础，用半径验电子输运方程对界面附近的剂量梯度分布进行了计算，得到了与实验符合较好的结果。
The dose gradient distributions of 60 Co γ rays in silicon at and near the interfaces between silicon and various materials were measured In the case of silicon adjacent to a high atomic number material, a dose enhancement effect was observed at the interface Dose gradient distributions were also calculated with a semiempirical electron transport equation based on the mechanisms of the Compton, photoelectric and Auger effects of γ-rays and secondary-electron transportation Good agreement was obtained between experimental and calculated results
出处
《核技术》
CAS
CSCD
北大核心
1997年第7期404-407,共4页
Nuclear Techniques
基金
国家自然科学基金
关键词
Γ射线
硅
界面
剂量分布
钴60
Co γ rays, Silicon, Interfaces, Dose distributions
