摘要
本文分析半导体材料GaAs对1064nm激光的可饱和吸收特性,在闪光灯抽运的平凹腔和平凸腔Nd:YAG激光器中,插入GaAs样品作为调Q器件,实现了激光器的被动调Q运转,分别获得脉冲宽度32.7ns(平凹腔)和30.9ns(平凸腔)的激光脉冲。实验上研究了平凹腔腔长和输出镜透过率对调Q激光输出性能的影响。当平凹腔腔长增加到125cm时,观察到GaAs对1064nm激光的被动锁模。对上述实验结果给予了合理的理论解释。
The saturable absorption properties of semi - conduction GaAs for 1064nm laser was researched. In the flashlamp pumped Nd： YAG laser with a plane-concave cavity（PCAC） and a plane- convexity cavity（PCXC）, passive Q- switching of GaAs was realized. 32.7ns Q- switched laser pulse from the PCAC and 30.9ns Q - switched laser pulse from the PCXC were obtained. The effect of cavity - length and transmission of the output mirror to the laser＇ s properties in the PCAC was studied. When the cavity - length of PCAC increased to 125cm, the passive mode locking of GaAs to 1064nm laser can be observed. The experimental resolts mentioned above were analyzed theoretically.
出处
《激光杂志》
CAS
CSCD
北大核心
2008年第3期17-18,共2页
Laser Journal
基金
福建省自然科学基金(A0610023)
