摘要
用脉冲激光二极管阵列(LDA)作为泵浦源,微柱透镜阵列和透镜导管作为耦合系统,以As+注入GaAs可饱和吸收片作为被动调Q元件,实现了Nd:YVO4激光器每泵浦脉冲单调Q脉冲输出。获得调Q脉冲宽度为7ns,脉冲峰值功率为3.4kW,激光器调Q效率为26.8%。对泵浦脉冲峰值、脉冲宽度和重复频率对调Q脉冲特性的影响进行了实验研究,并对实验结果进行了讨论。
A passively Q-switched pulse laser diode array（LDA）-pumped Nd： YVO4 laser that uses As^＋ implanted GaAs as a saturable absorber is demonstrated. In the experiment, a Q-switching pulse width of 7 ns with a pulse energy of 23.5 μJ is achieved which is the shortest pulse width in a passively Q-switched Nd：YVO4 laser using GaAs as saturable absorber. The laser produces only one Q-switching pulse in every pumping pulse duration with a Q-switching efficiency of 26.8% .We also investigate the characteristics of the Q- switched pulse by varying the pumping pulse amptitude, pulse width and repetition respectively. The experimental results are discussed as well.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2006年第12期1443-1446,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(60577015)
