摘要
采用交流阻抗技术研究了表面活性剂对不同条件下双-1,2-[3(三乙氧基)硅丙基]四硫化物硅烷在铝合金表面阴极电化学辅助沉积成膜的影响。研究表明:在硅烷溶液中加入表面活性剂进行改性,可降低硅烷在铝合金表面电化学沉积的阴极沉积电位,抑制硅烷沉积过程中的析H2作用,改善电极界面区域硅烷成膜环境。试验证明:硅烷溶液中表面活性剂的最佳改性浓度为0.03%,在此浓度下,铝合金表面硅烷阴极电沉积的最佳沉积电位为-1.6 V。
The effect of surfactant on deposition of Bis-1,2-[ triethoxysilylpropyl ] tetrasulfide （BTSPS） silane films on aluminum alloy at different conditions was investigated by the electrochemical impedance spectroscopy （EIS）. The results show that the decreasing of electrodeposition potential, the hydrogen evolution and the improvement of interface region of electrode could be reached while the surfactant is added into the silane solution. It can be found that the optimum concentration of surfactant is 0.03%, and a critical cathodic potential for silane deposition is -1.6V under experimental conditions.
出处
《表面技术》
EI
CAS
CSCD
2008年第3期1-3,57,共4页
Surface Technology
基金
长沙市科技计划项目(K061018-12)
关键词
表面活性剂
铝合金
最佳沉积电位
硅烷膜
电化学沉积
Surfactant
Aluminum
Critical cathodic potential
Silane film
Electrochemical deposition
