摘要
采用溶胶凝胶法在云母衬底上制备出掺杂Mo的VO2薄膜,并采用XRD、AFM、XPS、FTIR等检测手段,对掺杂薄膜的物相组成、微观形貌、相变温度进行分析。结果表明:在云母片表面制备出的掺杂的VO2薄膜呈(011)晶面取向生长,并且每增加1%的Mo掺杂量,其相变温度下降7.82℃,掺杂后降低了样品的滞回温宽,而且薄膜相变前后红外透过率的变化量仍保持较高。
In this paper, Mo-doped vanadium dioxide thin films were fabricated on muscovite slice using an inorganic sol-gel method. XRD, AFM, XPS and FTIR were used to investigate the microstructure, morphology and phase transition temperature. The results revealed that VO2 film was （011 ） preferred orientated on muscovite substrate. When the doped Mo ions concentration enhance 1%, the phase transition temperature decreased 7.82 ℃. The temperature width of hysteresis decreased and the orientated VO2 films exhibited excellent optical switching property after Mo doping.
出处
《钢铁钒钛》
CAS
2008年第2期5-8,共4页
Iron Steel Vanadium Titanium
关键词
二氧化钒
薄膜
钼掺杂
相变温度
vanadium dioxide
film
doped molybdenum
phase transition temperature
