摘要
在理论上对强外腔反馈情形的外腔半导体激光器线宽压窄效应进行了分析，对消反膜剩余反射率、外腔反射率、外腔腔长对线宽压缩的影响进行了研究；在实验上采用光纤光栅作为反馈元件，与一端镀有消反膜的１．５μｍ波段的常规多纵模半导体激光器耦合，构成强反馈光纤光栅外腔半导体激光器，得到单频窄线宽的激光输出，静态下边模抑制比大于３０ｄＢ，线宽小于１２０ｋＨｚ。
The linewidth reduction of a external cavity semiconductor laser with strong optical feedback is analysed. The effects of residual reflectivity r 2 of the AR coated laser facet, external cavity reflectivity r 3, and external cavity length L ex on the linewidth are studied theoretically. A fiber grating is coupled to a conventional multi longitudinal mode semiconductor laser with on facet AR coated. Single longitudinal mode operation with side mode suppression ration over 30 dB and linewidth below 120 kHz is achieved.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1997年第12期1609-1613,共5页
Acta Optica Sinica
基金
国家科委863高科技项目
八五攻关研究项目
