摘要
电力半导体器件的发展大大促进了交流变频调速传动装置性能的改善，ＭＯＳ栅结构的现代器件的开发成功，可以用很小的输入功率来控制很大的输出功率，并可大大降低装置的功耗，提高工作频率。具有优良反向恢复特性的整流二极管的开发成功，大大降低了高频工作下的功耗。目前的开关器件都是用硅材料制成，但利用ＳｉＣ等材料制成的电力开关器件具有很优良电气特性，是研制理想器件的关键。
The great advances in power semiconductor technology are the driving force for improvement of the performance of variable frequency motor drives.The development of power semiconductor devices with MOS gate structures has enabled the control of large output power with very little input power.and at same time has much reduced the losses of power,Rectifier diode with excellent reverse recovery characteristics has much reduced the power losses under the work of high frequency.At present,the power semiconductor devices are all made from silicon material,but power switching devices fabricated from silicon carbide SiC material have best electrical characteristics,and it is the key of development of the ideal device.
出处
《电气传动自动化》
1997年第3期3-8,共6页
Electric Drive Automation
关键词
交流变频调速
传动装置
电力半导体器件
Variable frequency AC motor drives Modern power semiconductor device Loss of power The trend of development
