摘要
探讨了一种多晶硅高温压力传感器的设计方法,论述了其较一般高温压力传感器的优点及其制造工艺流程。重点利用ANSYS软件对模型进行了热模拟,比较了AlN,SiO2与Al2O3分别作为绝缘散热层时模型中的温度分布,并且比较了散热层不同厚度时力敏电阻中心点的温度。
A design method of polysilicon high-temperature pressure sensor was demonstrated. Compared with other high-temperature pressure sensors and their fabrication process, the advantages of the polysilicon high-temperature pressure sensor were discussed. The temperature distribution in the model were simulated essentially by using ANSYS software, respectively the temperature distribution performances are compared among AIN, SiO2, Al2O3 which being as heat dispersion-layer, and the temperatures at resistor center are presented in different thickness of these heat dispersion-layers.
出处
《传感器世界》
2008年第1期17-20,共4页
Sensor World
关键词
ANSYS
高温压力传感器
有限元分析
热模拟
ANSYS
high-temperature pressure sensors
finiteelement analysis（FEA）
thermal simulation, EEACC：2550
