摘要
SiC nanometer whisker, whose diameter was about 50nm and purity was 98.54%, was synthesized by microwave heating in an atmosphere of argon. Char pyrolyzed phenolformaldehyde resin and SiO2 nanometer powder were used as starting materials. The properties of the whisker were determined by XRD and TEM. The mechanism for synthesizing SiC nanometer whisker was discussed.
SiC nanometer whisker, whose diameter was about 50nm and purity was 98.54%, was synthesized by microwave heating in an atmosphere of argon. Char pyrolyzed phenolformaldehyde resin and SiO2 nanometer powder were used as starting materials. The properties of the whisker were determined by XRD and TEM. The mechanism for synthesizing SiC nanometer whisker was discussed.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
1997年第4期380-384,共5页
Acta Physico-Chimica Sinica
