摘要
本文研究了以半导体材料砷化镓霍尔器件与高性能稀土永磁材料构成的小位移传感器及其检测电路，推导了位移量与霍尔电势的关系，建立了传感器的数学模型，并对非线性和温度误差进行了理论分析，在传感器的设计上实现了变换器与变换电路的一体化封装。经实际应用证明，传感器可分辨的最小位移变化量为０．１μｍ，本测量系统切实可行，有一定的推广应用价值。
The principle of a micro displacement sensor with a resolution of 0.1 composed of GaAs Hall sensing element and high performance rare earth materials, and its measurement circuit are presented in this paper. Meanwhile, the relationship between the displacement and Hall voltage, the mathematical model of the sensor, and theoretical analysis of the non linearity and temperature errors are also described.
出处
《仪表技术与传感器》
CSCD
北大核心
1997年第3期11-13,共3页
Instrument Technique and Sensor
