摘要
磁控溅射沉积获得的非晶态WO3膜在空气中分别加热200℃，250℃，300℃，350℃及400℃，并保温30min进行热处理。随着热处理温度的提高，非晶态WO3膜的电致变色性能下降。当热处理温度高于350℃时，非晶态转变成结晶态。着色的结晶态WO3膜在可见光谱范围（0．38～0．78μm）及太阳光谱范围（0．34～2．5μm）内吸收调制能力低于非晶态WO3膜，但是结晶态WO3膜在近红外区有较强的反射调制。基片加温到220℃以上沉积得到的WO3膜均为结晶态。这种结晶态膜的电致变色性能优于空气中热处理得到的结晶态WO3膜，但两种膜的变色性能与各自的制备温度没有明显的依赖关系。在相同的电化学测试参数条件下，结晶的WO3膜的变色响应速率低于非晶态膜。利用X射线光电子能谱（XPS）及X射线衍射分析判定，结晶态WO3膜在HCl电解液中施加电信号发生着色／退色是由于H＋的注入／抽取所致，在着色的膜中存在着W6＋，W5＋及W4＋离子。
Amorphous WO3 films deposited by magnetron reactive sputtering were annealed at 200℃,250 ℃,300℃,350℃,400℃ for 30 min respectively in air. The electrochromic properties of W oxide filrns degrade with the increasing annealing temperature,and the films changed into crystalline state at an annealing temperature above 350℃. At colored state,the c-WO3's absorption modulation was foumd to be lower than that of a-WO3 in the luminous and solar wavelength range. However the c-WO3 has strong reflection modulation in the near-infrared range.The c-WO3 films were also obtained with the substrates heated above 220℃ during the sputtering,whose electrochromic properties were better than that of the samples annealed in air after sputtering deposition at room temperature. The temperature influence affects Iitt1e the electrochromic properties of c-WO3films,either with substrates heated during the sputtering or annealed in the air after sputtering. The electrochromic response speed of c-WO3 films are slower than that of the a-WO3 films.X-ray diffraction and X-ray photoelectron spectroscopy (XPS) results of the c-WO3 films showed that the coloration/bleaching mechanism for c-WO3 films in the electrolyUte HCl is injection/rejection of H+ ions by applying voltages. W6+,W5+,W4+ were found to be at colored state of the c-WO3 films.
出处
《真空科学与技术》
CSCD
北大核心
1997年第4期219-225,共7页
Vacuum Science and Technology
关键词
电致变色
晶态
三氧化钨
吸收调制
薄膜
Electrochromic, Absorption modulation, Reflection modulation
