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退火温度对聚乙二醇改性氧化钨薄膜结构及电致变色性能的影响 被引量:1

Effect of Annealing Temperature on Microstructure and Electrochromic Properties of PEG-doping Tungsten Oxide Thin Films
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摘要 为改善氧化钨薄膜的电致变色性能,通过溶胶-凝胶法钨粉过氧化路线制备了聚乙二醇改性的氧化钨电致变色薄膜,并对其进行了不同温度的热处理,研究了不同退火温度对聚乙二醇改性氧化钨薄膜结构及电致变色性能的影响。采用X射线衍射(XRD)、透射电子显微镜(TEM)、扫描电子显微镜(SEM)、光谱椭偏仪(SE)、紫外-可见分光光度计、电化学工作站对薄膜的微观结构、光谱调制能力、着色效率、离子扩散能力、可逆性和响应时间及循环稳定性进行了表征和分析。结果表明,适当温度的热处理可以得到一种多孔的纳米晶/非晶复合结构薄膜,从而更有利于离子在薄膜中的扩散与迁移;300℃热处理PEG改性WO3薄膜表现出较高的光学调制幅度、着色效率以及良好的循环可逆性。 In order to improve electrochromic property of tungsten oxide (WO3) thin film, PEG-doping WO3 films were prepared by peroxopolytungstic acid sol-gel method. The effect of annealing temperature on microstructure and electrochromic properties of the PEG-doping WOa films was investigated. X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron mcroscopy (SEM), spectra ellipsmetry (SE), ultraviolet-visible spectrophotometer (UV-Vis) and electrochemical measurements were used to characterize the microstructure, optical modulation, c010r efficiency, reversibility and response time of the prepared films. Results indicated that a porous nanocrstalline/amorphous nanostructure can be obtained by suitable heat-treatment, which facilitates ions transport in the films. And the WO3film annealed at 300℃ has better optical modulation, c010r efficiency and reversibility.
出处 《材料科学与工程学报》 CAS CSCD 北大核心 2013年第2期175-180,190,共7页 Journal of Materials Science and Engineering
基金 浙江省自然科学基金资助项目(Y12E020040)
关键词 电致变色 氧化钨薄膜 聚乙二醇改性 微结构 electrochromism tungsten oxide thin film PEG-doping microstructure
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  • 1朱晓东,傅永庆,何家文.离子束增强沉积技术制备MoS_2固体润滑膜[J].材料科学与工程,1996,14(1):13-16. 被引量:1
  • 2张德银,黄大贵,董政.溶胶凝胶钽酸锂薄膜热释电红外探测器的设计与制备(英文)[J].光电工程,2006,33(12):113-118. 被引量:6
  • 3张德银,黄大贵,李金华,李坤,但迪迪,董政.ITO衬底上LiTaO_3薄膜的制备与介电特性[J].红外与毫米波学报,2007,26(3):170-173. 被引量:8
  • 4潘国峰,何平,孙以材,高金雍.退火温度对纳米TiO_2薄膜的乙醇气敏特性的影响(英文)[J].材料科学与工程学报,2007,25(6):965-968. 被引量:5
  • 5Norkus V, Gerald G, and Hofmann G. Process technology for high-resolution infrared detectors based on LiTaOs [ C]. Proceedings of SPIE-The International Society for Optical Engineering, 1999, 3892:233-240.
  • 6Ming-cheng Kao, Maw-shung Lee, Chih-ming Wang, et al. Properties of LiTaO3 thin films derived by a diol-based Sol-Gel process[J]. Japanese Journal of Applied Physics, 2002, 41: 2982-2986.
  • 7Deyin Zhang, Wentian Luo, Yong Bao, et al. Thickness effect and etching implement of silicon substrate of LiTaO3 thin film infrared detector[C]. Proceedings of SPIE - The International Society for Optical Engineering, 2010, 7658:76580Q-1 76580Q-6.
  • 8Nougaret L, Combette P, Pascal-Delannoy F. Growth of lithium tantalate thin films by radio-frequency magnetron sputtering with lithium enriched target[J]. Thin Solid Films, 2009, 517: 1784-1789.
  • 9Deyin Zhang,Dagui Huang, Yanqiu He. Intelligent temperature control strategy for LiTaO3 thin films deposition process[C]. IEEE Proceedings of the 2004 International Conference on Intelligent Mechatronies and Automation, 2004, 339-344.
  • 10Satapathy S, Verma P, Gupta P K, et al. Structural, dielectric and ferroelectrie properties of multilayer lithium tantalate thin films prepared by sol-gel technique[J]. Thin Solid Films, 2011, 519 : 1803- 1808.

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