摘要
利用俄歇电子能谱（ＡＥＳ）、二次离子质谱（ＳＩＭＳ）等表面分析手段，对硅栅ＭＯＳ结构Ｐｏｌｙ－Ｓｉ／ＳｉＯ２界面进行分析，发现该界面不是突变的，存在着成份过渡区．根据多晶硅薄膜的成核理论，确定该过渡区形成的物理起源．利用Ｆｏｗｌｅｒ－Ｎｏｒｄｈｅｉｍ隧道发射和“幸运电子”模型。
The poly Si/SiO 2 interface of polysilicon gate MOS structure is studied using AES and SIMS. It is found that instead of changing abruptly, the composition of the interface changes in a region——transition region. According to the film nucleation theory, the physical mechanism of the region formation is understood. The influence of the region on dioxide conductance and hot carrier injection effect is analyzed quantitatively by use of Fowler Nordheim tunnelling emission and “lucky electron” models.
出处
《东南大学学报（自然科学版）》
EI
CAS
CSCD
1997年第4期38-43,共6页
Journal of Southeast University：Natural Science Edition
关键词
界面
热载流子
硅栅MOS结构
Poly-硅
二氧化硅
Auger electron spectrometry
secondary ion mass spectroscopy
induction period
conductance
hot carrier
