摘要
利用透射电子显微镜(TEM)和电子自旋共振(ESR)分别对a-Si∶H/a-C∶H超晶格的界面结构和自旋电子态进行了研究,发现a-Si∶H/a-C∶H界面存在6-15A的过渡层,而且在界面上还存在面密度约10^(12)cm^(2)的未配对电子,这些未配对电子被证实是非晶硅和非晶碳在界面失配产生的.
The interfacial structure and spin density in a-Si:H/a-C:H superlattices made by GD pro-cess have been investigated by means of TEM and ESR measurements,respectively.The re-sults obtained show an indication of an excess transition layer near the interfaces,the thicknessof which is in the range of 6-15A. A large excess spin density, in the order of 10^(13)cm^(-2), nearthe interfaces is also observed, which may be attributed to the interface mismatch betweenamorphous silicom and carbon sublayers.
