摘要
以GaN基功率型发光二极管为核心的半导体照明光源,已经展示了广阔的应用前景,但其流明效率和公认的200lm/W的路线图目标相比还有较大的发展空间。从材料外延、管芯制作、器件封装和系统应用等方面介绍了半导体照明关键技术的最新进展,其中包括清华大学集成光电子学国家重点实验室的研究成果,并展望了未来的研究方向。
Solid state lighting based on gallium nitrides high power light emitting diodes has brought forth a wide application prospect. But there is still a huge gap between the present performance of the solid state lighting source and the roadmap target （200 ImAN）. The latest technology developments of solid state lighting were reviewed from material epitaxy, chip fabrication process, device package and system application design, which also included the study results from state key laboratory on integrated optoelectronics, Tsinghua University, and the future trend was also discussed.
出处
《激光与光电子学进展》
CSCD
北大核心
2007年第3期17-28,共12页
Laser & Optoelectronics Progress
基金
国家自然科学基金项目(60536020
60390074)
国家重点基础研究发展计划"973"(2006CB302801
2006CB302804
2006CB302806
2006CB921106)
国家高技术研究发展计划"863"(2006AA03A105)
北京市科委重大计划(D0404003040321)资助项目。
关键词
半导体照明
氮化镓
发光二极管
流明效率
热阻
非成像光学
solid state lighting
gallium nitrides
lighting emitting diodes
lumen efficiency
thermal resistance nonimaging optics
