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NiPd/Si界面常温扩散及硅化物形成的XPS证据 被引量:1

XPS Evidence for the Diffusion and Formation of Metal Silicide at Atmospheric Temperature on the Interface of NiPd/Si
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摘要 Nickel-palladium film on p-Si prepared by potential -controlled electrodeposition has much better adherence than that deposited by other methods .To reveal the reasons of this effect ,X-ray photoelectron spectroscopy (XPS) combmed with Ar+sput tering was used to investigate the interface of NiPd /Si .The results showed that dramatic interdiffusion of Ni, Pd and Si had occurred at atmospheric temperature .On the XPS spectra of mckel and palladium ,there are two kinds of binding energy ,contributed by pure metals and metal silicide respectively. NiSi, PdSi and Pd2Si were formed at the interface. Both of the electric field on the surface and the H atoms in the metal lattice have the possibility to promote reactions between nickel or palladium and silicon . Nickel-palladium film on p-Si prepared by potential -controlled electrodeposition has much better adherence than that deposited by other methods .To reveal the reasons of this effect ,X-ray photoelectron spectroscopy (XPS) combmed with Ar+sput tering was used to investigate the interface of NiPd /Si .The results showed that dramatic interdiffusion of Ni, Pd and Si had occurred at atmospheric temperature .On the XPS spectra of mckel and palladium ,there are two kinds of binding energy ,contributed by pure metals and metal silicide respectively. NiSi, PdSi and Pd2Si were formed at the interface. Both of the electric field on the surface and the H atoms in the metal lattice have the possibility to promote reactions between nickel or palladium and silicon .
出处 《物理化学学报》 SCIE CAS CSCD 北大核心 1997年第2期164-168,共5页 Acta Physico-Chimica Sinica
基金 国家自然科学基金
关键词 XPS 扩散 金属硅化物 NiPD合金 界面 半导体 XPS, NiPd /Si interface, Diffusion ,Metal silicide
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  • 1张国庆 刘冰 等.-[J].天津大学学报,1998,1:29-29.
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