摘要
介绍了GaAs太阳能电池的基本原理、结构设计和制作工艺。用水平液相外延系统 ,三室分离多片外延石墨舟 ,研制了 p+-AlxGa1 -xAs/ p -n+-GaAs结构的太阳能电池。在AMO ,1 0 0mW/cm2 ,2 5℃的测试条件下 ,开路电压 (Voc)为994mV ,短路电流密度 (Jsc)为 2 3.2mA/cm2 ,填充因子 (FF)为 0 .794,光电转换效率 (η)达 1 8.2 %。
Fundamental principle,structure design and fabrication technology are described for GaAs solar cells.Solar cells with p +-Al x Ga 1- x As/p-n +-GaAs structure have been fabricated by horizontal LPE system and graphite boat with three separated units multi-wafer.At AMO,100 mW/cm 2 and 25 ℃,the measured results of open voltage of 994 mV,fill factor of 0.794 and photoelectric conversion efficiency of 18.2%,have been obtained respectively.
出处
《半导体光电》
CAS
CSCD
北大核心
1997年第1期56-60,共5页
Semiconductor Optoelectronics
