摘要
采用固相合成法制备了SnO_2掺杂的TiO_2基压敏电阻系列样品,并通过XRD和SEM分析,以及I-V曲线测量对材料的结构和电学性能进行了研究。结果表明:SnO_2的掺杂抑制了晶粒的生长,晶界相含量增加。电性能测试结果显示,SnO_2的掺杂量在0～1.5 mol%内,击穿场强随SnO_2掺杂量的增加单调递增:非线性系数先增加后又减小,掺杂量为0.8 mol%的样品具有最大的非线性系数(a=8.3)。并对以上的实验结果从理论上给予了分析。
TiO2-based varistors doped with SnO2 were prepared by solid state reaction method. The microstructure was analyzed by XRD and SEM. The electrical properties were studied by I-V curves and capacitance measurement. Structure analysis shows that the grain size of SnO2 doped TiO2 varistors decreases with increasing SnO2 content. The electrical performance measurement shows that with the increase of SnO2 content from 0 to 1.5mol% the breakdown strength increases gradually. The nonlinear coefficient increases with SnO2 doping and reaches the highest nonlinear coefficient （α= 8.3） when doping content is 0.8mol%.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2007年第A02期177-180,共4页
Rare Metal Materials and Engineering
关键词
压敏电阻
非线性系数
压敏电压
varistor
nonlinear coefficient
breakdown strength
