摘要
本文采用多靶磁控溅射仪旋转基片的方法，利用红外灯管加热基片，制备了不同基片温度的Ａｇ－ＳｉＯ２复合薄膜（１５．０ａｔ％Ｓｉ）。采用ＴＥＭ分析了薄膜的微观结构并测定了薄膜的电阻率。研究结果表明：通过改变基片温度，可以控制Ａｇ－ＳｉＯ２复合薄膜中Ａｇ粒子的形态；当基片温度高于３００℃时，复合膜中孤立的Ａｇ颗粒直径为１０～１００ｎｍ；薄膜的电阻率亦可通过基片加热在１０２～１０６μΩ·ｃｍ范围内改变。
Ag SiO 2 metal insulator composite thin film was prepared by magnetron co sputtering Ag and SiO 2 by rotating and heating substrates at various temperatures. The microstructure was studied by TEM and the resistivity was measured. The results indicated that the morphology of Ag could be controlled by rising of the substrate temperature. When substrate temperature is kept above 300℃, Ag particles are smaller than 100nm (10～100nm),and the resistivity of films waries in the range of 10 2～10 6μΩ·cm by heating substrate.
出处
《功能材料》
EI
CAS
CSCD
北大核心
1997年第4期396-398,共3页
Journal of Functional Materials
基金
华东分析测试中心检测基金
