摘要
大功率压电陶瓷要求材料不但在强场下有小的介质损耗,大的机械品质因数,同时兼备一定的压电常数和机电耦合系数.当然一般说来,Qm提高的话,Kp、d33就会降低,所以我们希望在保证高Qm情况下,尽可能提高压电应变系数d33和机电耦合系数Kp.微观结构对陶瓷性能有着重要的影响,通过选择合理的烧结制度改变材料的微观结构,可以提高材料的性能.本文研究升温速度和保温时间对PMSZT大功率压电陶瓷的相组成、显微结构及电性能的影响.结果发现升温速度过快或过慢会使材料致密性下降.烧结温度1240℃保温1h时,晶粒致密均匀,居里温度最低.随着保温时间的缩短或延长,居里温度增加.电性能在保温1 h时达最佳:ε33T/ε0=1700,d33=336×pC/N,Kp=0.655,Qm=2200,tanδ=0.0030.PMSZT陶瓷介电和压电性能良好,可以满足了大功率材料的使用要求.
High - power piezoelectric ceramics are desirable to combine a high mechanical quality factor （ Qm ） with a high piezoelectric constant （d 33 ） and a high planar coupling factor （Kp）. However, when Qm is increased, Kp and d33 will be decreased. So, it is essential to have a material that gives a high Qm and at the same time Kp and d33 are well situated. Microstructure affects the properties of ceramics materials greatly, which can be enhanced by choosing right sintering rules to change the microstructure. The effects of heating rate and soaking time on crystallographic phase, microstructure, electric - properties of PMSZT high - power piezoelectric ceramics have been studied. The results show that densification decrease when heating rate is too low or too fast. At 1240℃, grains grow up homogeneously tained with 1 h soaking time. With soaking temperature. A well - situated property of time prolonging ε33^r/ε0 （ 1700 ） and the minimum value of Curie temperature is obor shortening, the Curie temperature moves to high , d33 （336pC/N）, Kp （0. 62 ）, Qm （2200）, tan8 （0. 0030） have been obtained when soaking time is lh. PMSZT ceramics exhibite a well- situated property, which can satisfy the desire of high - power piezoelectric ceramics.
出处
《材料科学与工艺》
EI
CAS
CSCD
北大核心
2007年第3期393-396,共4页
Materials Science and Technology
基金
国家自然基金重点资助项目(10232030)
关键词
大功率压电陶瓷
升温速度
保温时间
相组成
显微结构
High - power piezoelectric ceramics
heating rate
soaking time
crystallographic phase
micro- structure
