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SiO_2对低温烧结PMSZT压电陶瓷性能的影响 被引量:5

Properties of Low Temperature Sintering SiO_2-Modified PMSZT Piezoelectric Ceramics
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摘要 探讨了低温烧结时SiOz掺杂对锑锰锆钛酸铅Pb(Mn1/3Sb2/3)0.06Zr0.47Ti0.48O3(PMSZT)压电陶瓷性能的影响,通过X-射线衍射及扫描电镜分析Pb(Mn1/3Sb2/3)0.05Zr0.47Ti0.48O3+w(SiO2)(w=0.05%~0.30%,质量分数)陶瓷的相组成和显微结构。结果表明,合成温度900℃时,可得到钙钛矿结构。w(SiO2)不同时PMSZT试样均为四方相和三方相共存,随着w(SiO2)的增加,三方相在准同型相界中的比例略有增加。当w(SiO2)=0.10%时,得到电性能优良的压电陶瓷,相对介电常数ε33^T/ε0=1290,介质损耗tan δ=0.4%,压电常数d33=264pC/N,机电耦合系数kp=0.59,机械品质因数Qm=3113。SiO2的加入使PMSZT陶瓷的居里温度降低,谐振频率随温度的变化几乎都是正。 The effects of SiO2 on the properties of low temperature sintering lead antimony-manganese zirconate titanate Pb (Mn1/3 Sb2/3 ) 0.05Zr0.47 Ti0.48O3 (PMSZT) ceramics were studied. The crystallographic phase, microstructure were investigated by means of XRD and SEM for Pb (Mn1/3 Sb2/3 )0.05Zr0.47 Ti0.48O3 + w (SiO2) (w = 0.05%-0.30% in mass) ceramics. The results show that pure perovskite structure is obtained at calcination of 900 ℃. With increasing SiO2 content, the Morphotropic phase boundary contained both rhombohedral phases and rhombohedral phase, and rhombohedral phases was a little more. The values of relative dielectric constant ε33^T/ε0 ( 290), dielectric loss tan δ(0.4%), piezoelectric constant d33 (264 pC/N), electromechanical coupling factor kp (0.59) , mechanical quality factor Qm (3 113) are obtained as SiO2 is 0.10% in mass, which exhibit more excellent electric-properties. The Curie temperature moves toward low temperature and the changes of resonant frequency are all positive with temperature increasing.
作者 何杰 孙清池
出处 《压电与声光》 CSCD 北大核心 2008年第2期224-227,共4页 Piezoelectrics & Acoustooptics
基金 天津大学先进陶瓷与加工技术教育部重点实验室资助项目(x06050)
关键词 压电陶瓷 锑锰锆钛酸铅 SIO2 低温烧结 piezoelectric ceramics lead antimony-manganese zirconate titanate silica low temperature sintering
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参考文献13

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