期刊文献+

ArF和KrF准分子激光器用的光学材料和膜层的抗激光强度 被引量:3

原文传递
导出
出处 《激光与光电子学进展》 CSCD 1997年第5期9-15,共7页 Laser & Optoelectronics Progress
  • 相关文献

同被引文献46

  • 1段安锋,范翊,刘景和,沈永宏.CaF_2晶体及加工技术研究[J].长春理工大学学报(自然科学版),2007,30(2):97-99. 被引量:13
  • 2National Institute of Advanced Industrial Science and Technology. Raman Spectra Database of Minerals and Inorganic Materials (RASMIN)[DL]. http://riodb. ibase. aist. go. jp/rasmin/.
  • 3M. Schlesinger, P. W. Whippey. Investigations of 4f5d transitions of Ce3+ in CaF2[J]. Phys. Rev., 1968, 171(2): 361-364.
  • 4D. Basting, G. Marowsky eds. Excimer Laser Technology[M]. Berlin: Springer, 2005.
  • 5Koji Kakizaki, Yoichi Sasaki, Toyoharu Inoue. High-repetition-rate, 6 kHz and long-pulse-duration, 50 ns ArF excimer laser for sub-65 nm lithography[J]. Rev. Sci. Instrum., 2006, 77(3): 035109.
  • 6N. Komine, S. Sakuma, M. Shiozawa et al.. Influence of sodium impurities on ArF excimer-laser-induced absorption in CaF2 crystals[J]. Appl. Opt., 2000, 39(22): 3925-3930.
  • 7Ch. Mühliga, W. Triebel, D. Keutel et al.. Investigating the ArF laser stability of CaF2 at elevated fluencies[C]. SPIE, 2005, 5878: 58780E.
  • 8C. R. Clar, M. J. Dejneka, R. L. Maier et al.. Extended Lifetime Excimer Laser Optics[P]. US Patent 7,242,843, 2007.
  • 9M. Mizuguchi, H. Hosono, H. Kawazoe et al.. Generation of optical absorption bands in CaF2 single crystals by ArF excimer laser irradiation: effect of yttrium impurity[C]. J. Vac. Sci. Technol. A, 1998, 16(5): 3052-3057.
  • 10V. Liberman, M. Rothschild, J. H. C. Sedlacek et al.. Excimer-laser-induced degradation of fused silica and calcium fluoride for 193-nm lithographic applications[J]. Opt. Lett., 1999, 24(1): 58-60.

引证文献3

二级引证文献11

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部