摘要
以Zn(CH3COO)2·2H2O为蒸发源,利用热蒸发分解法在Si衬底上沉积了多晶ZnO薄膜.使用多种分析测试手段(XRD,SEM,PL,霍尔效应)对不同的衬底温度下得到的ZnO薄膜的物理性质及结构特征进行分析表征.ZnO薄膜为六角纤锌矿结构,但在高角度时可以观察到衍射峰的分裂,表明ZnO薄膜中结构的非均一性.所得到的ZnO薄膜在蓝光波段具有强烈的受激发射.霍尔效应测量显示在衬底温度低于480℃时,薄膜为空穴导电(p-type),而高于480℃时,为电子导电(n-type).在不同衬底温度下,薄膜表面具有不同形貌特征.还探讨了对于ZnO薄膜的热蒸发分解法的成膜机理.
A series of undoped ZnO polycrystalline films were grown on Si substrates by thermal deoomposition method with Zn（CH3COO）2·2H2O as source at different substrate temperatures. The films prepared were characterized by XRD, SEM,PL and Hall Effect measurement. The XRD results revealed wurtzite type structure of the ZnO films. However, splitting of diffraction peak was observed at high angle, indicating the structure of the films is not uniform. The PL spectra of the film showed strong emission in the blue light band. Hall measurement revealed p-type of the films at lower deposition temperature（〈480℃ ）, while at higher temperature（≥480℃）, it changes into n-type. SEM measurements showed the dependence of the film morphology on the substrate temperature. Base on these results, the technology and mechanism about thermal decomposition method are analyzed.
出处
《复旦学报（自然科学版）》
CAS
CSCD
北大核心
2007年第1期65-69,75,共6页
Journal of Fudan University：Natural Science
关键词
材料科学
ZNO薄膜
P型半导体
热蒸发分解
material science
ZnO film
p-type semiconductor
thermal deoompcsition
