摘要
测定了ＴＡＰ晶体中铊离子的价态，发现ＴＡＰ晶体中除了一价的铊离子Ｔｌ＋外，还有少量三价铊离子Ｔｌ３＋的存在．实验还测定ＴＡＰ晶体中存在的金属离子杂质，总量为０２０７ｍｇ／ｇ．联系ＴＡＰ结构的特点讨论了ＴＡＰ晶体存在Ｔｌ３＋和金属离子杂质是产生ＴＡＰ晶体结构缺陷的重要原因。
The valence states of thallium ions in TAP crystal have been determined. It is shown that besides Tl +, there is a small number of Tl 3+ ions in TAP. The metal-ions impurities, the total of which is about 0 207mg/g, have been measured. In this paper, taking into account the features of the structure in TAP, we find that the exiting Tl 3+ ions and metal-ions impurities are the important reason for structure defects in TAP. The reason that the dislocation line runs parallel to c axis is analyzed as well.
出处
《福州大学学报（自然科学版）》
CAS
CSCD
1997年第1期98-101,共4页
Journal of Fuzhou University(Natural Science Edition)
基金
863计划资助
关键词
邻苯二甲酸氢铊
X射线分光晶体
晶体缺陷
thallium hydrogen phthalate
X-ray spectroscopy crystal
crystal defect
