摘要
基于一简单模型和叠加原理，分别研究了单丝和多丝化学气相沉积（ＣＶＤ）系统的温度场及基底表面的温度分布。由此得到沉积区域基底表面的温度分布以及金刚石薄膜的生长率与基底温度的关系曲线而得到基底表面的生长率分布。
Temperature profile in single and multi filament CVD system and temperature distribution in the substrate surface were analysised based on a simplified model and the addition principle respectively.The temperature distribution of the deposition area obtained from them and the growth rate distribution obtained from the growth rate substrate temperature curve conformed to the exprimental results.
出处
《化学工业与工程》
CAS
1997年第1期41-45,共5页
Chemical Industry and Engineering
关键词
热丝CVD系统
温度场
温度
分布
金刚石薄膜
hot filament CVD system temperature profile temperature distribution in substrate surface growth rate
