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铜互连线内电流拥挤效应的影响 被引量：1

Influence of Current Crowding for Cu Interconnects
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摘要 提出了一种新的测试结构(S结构),通过实验、理论推导和有限元分析,研究了铜与TaN扩散阻挡层界面的电流拥挤效应对电迁移致质量输运特性的影响。实验和有限元分析表明,铜互连线内由于电流拥挤效应的存在,在用户温度下沿特定通道输运的局部原子通量显著增大,而焦耳热所产生的温度梯度对原子通量和通量散度增大的影响则相对有限。 A slit-test structure was designed to structurally induce and accelerate current crowding in Cu damascene lines. Electromigration （EM） experiments, theoretical calculation and quantitative finite element analysis were applied to study the impact of current crowding on EM-induced mass transport along damascene Cu wires on the interface between Cu/TaN barrier layers. Experiments and quantitative finite element analysis demonstrates local atomic flux is enhanced by current crowding in situ; at the same time, atomic flux and flux divergence is effect remarkably along critical diffusion paths enhanced relatively limitedly by Joule-heating induced temperature gradients.
作者 任韬 翁妍 徐洁晶 汪辉
机构地区 上海交通大学微电子学院
出处 《半导体技术》 CAS CSCD 北大核心 2007年第5期378-381,共4页 Semiconductor Technology
基金 国家自然科学基金(NSFC60606015) 上海市浦江人才计划项目(05PJ14068)
关键词 铜互连 电流拥挤 电迁移 质量输运 有限元分析 Cu interconnects current crowding electromigration mass transport finite element analysis
分类号 TN405 [电子电信—微电子学与固体电子学]
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参考文献12

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二级参考文献10

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半导体技术
2007年 第5期

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