摘要
为了研究Ｎｄ１８５Ｃｅ０１５ＣｕＯ４－δ体系中载流子的电荷性质，分别在Ｎｄ１８５Ｃｅ０１５ＣｕＯ４－δ中用Ｃａ２＋取代Ｎｄ３＋制备了Ｎｄ１８５－ｘＣｅ０１５ＣａｘＣｕＯ４－δ样品，在Ｎｄ２ＣｕＯ４－δ中用Ｃａ掺杂制备了Ｎｄ２－ｘＣａｘＣｕＯ４－δ样品，并对上述样品进行了详细的输运性质研究．随着Ｃａ含量的增加，样品的霍耳系数ＲＨ发生了由负向正的转变，Ｃａ掺杂引起晶格畸变。
In order to investigate the nature of the charge carriers in NdCeCuO system, we prepared Nd 1 85- x Ce 0 15 Ca x CuO 4- δ and Nd 2- x Ca x CuO 4-δ , and studied transport properties of them. With increasing Ca concentration, the sign of Hall coefficient is changed from negative to positive. The hole state in CuO 2 plane arises from the lattice distortion induced by Ca doping, which leads to the O2p band pass through the Fermi level.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1997年第4期756-761,共6页
Acta Physica Sinica
基金
高等学校博士学科点专项科研基金
