摘要
用120keV碳离子注入非晶SiO2薄膜,再用高能Xe、Pb和U离子辐照。注碳剂量范围为2.0×1017—8.6×1017 cm-2,高能离子辐照剂量1.0×1010—3.8×1012 cm-2。辐照后的样品用傅里叶变换红外光谱仪进行系统分析。实验结果显示,高能离子辐照在注碳非晶SiO2薄膜中形成了大量的Si-O-C键和Si-C键。这些Si-O-C结构具有环链、开链和笼链等多种结构形式。随电子能损、辐照剂量或者沉积能量密度的增加,SiOC结构由类笼向环/开链结构演化。对高能重离子驱动产生SiOC结构的机理进行了简单的讨论。
Thermally grown amorphous SiO2 films on single crystalline silicon were implanted at room temperature （RT） with 120keV C ions to 2.0×10^17-8.6×10^17 cm^-2,then irradiated at RT by high energy Xe, U and Pb ions to 1.0×10^10-3.8×10^12 cm^-2. The variation of chemical bonding configuration in these samples induced by high energy ion bombardments was investigated using Fourier Transformation Infrared （FTIR） spectroscopy. The obtained results showed that a large amount of Si-O-C and Si-C bonds was formed in the heavy ion irradiated C-doped amorphous SiO2 films. The SiOC bonds are of cage-, ring- or open-linked structures, and the cage-linked structure tends to ring- /open-linked structure with the increase of heavy ion irradiation fluence, electronic energy loss, or deposited energy density in the samples. The mechanism of SiOC formation induced by high energy heavy ion irradiations was briefly discussed.
出处
《核技术》
EI
CAS
CSCD
北大核心
2007年第4期328-331,共4页
Nuclear Techniques
基金
国家自然科学基金项目(10125522
10475102)
中科院‘西部之光’联合学者项目资助
关键词
重离子辐照
注入
SIOC
Heavy ion irradiation, Implantation, SiOC
