摘要
室温下,先用100—120keV的N离子注入类金刚石薄膜和石墨中,注入剂量5×1017至5×1018 cm-2,再用高能Xe、U、C60离子分别辐照注氮后的样品,然后用显微FTIR和Raman、XRD/XPS等手段进行分析表征,研究了实验样品中由辐照引起的新化学键和新相的产生。实验结果显示,高能重离子辐照可在所有样品中产生大量的CN键,高N浓度和大密度能量沉积导致sp3/sp2键比率的增加以及形成α-和β-C3N4必需的N-sp3C键的量的增加。C60离子辐照在注氮石墨样品中引起了ta-C、N=sp2C和N-sp3C键的形成;而高能离子辐照在注氮类金刚石薄膜样品中产生了α-和β-C3N4晶态夹杂物,其尺寸在1.4—3.6nm之间。
Diamond-like-carbon films and graphite samples were implanted at room temperature （RT） using 100-120 keV N-ions to 5×10^17-5×10^18 cm^-2, and then irradiated at RT using 345 MeV Xe, 2.64 GeV U or 30 MeV C60 ions, respectively. The irradiated samples were characterized by FTIR, Raman, and XRD or XPS spectroscopes, and the formation of new chemical bonds and phases in the N-doped samples induced by heavy ion irradiations were studied. It was found that high-energy heavy ion irradiations could significantly induce the formation of CN bonds in all samples, high N-concentration and intense energy deposition result in the increment of sp^3/sp^2 bonding ratio and the enhancement of the formation of N-sp^3C bonds that are needed for α- and β-C3N4 phase production. Furthermore, C60 ion irradiation could result in the formation of CNx and tetrahedral amorphous carbon in the C-doped graphite samples, whereas high-energy Xe and U ions could produce α- and β-C3N4 crystalline inclusions in the C-doped diamond-like-carbon samples.
出处
《核技术》
EI
CAS
CSCD
北大核心
2007年第4期337-341,共5页
Nuclear Techniques
基金
国家自然科学基金资助项目(10125522
10475102)
中科院‘西部之光’资助项目
关键词
N离子注入
高能重离子辐照
类金刚石薄膜
石墨
碳氮化合物
N-ion implantation, High-energy heavy ion irradiation, DLC films, Graphite, Carbon-nitrides
