期刊文献+

功率器件集成门极换流晶闸管关断特性研究 被引量:8

Discussion on the Turn-off Transient Behaviours of Integrated Gate-commutated Thyristor
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摘要 为深入研究IGCT的关断特性,该文基于实验结果,建立了IGCT关断过程中,流过IGCT电流的波形的数学模型,在此基础上进而提出用微分方程研究电路中IGCT关断特性的方法。为验证该方法的有效性,以建立的IGCT关断过程电流波形数学模型为基础。该文建立基于斩波电路的IGCT关断暂态特性的数学模型。该模型充分考虑IGCT阻容吸收回路、线路杂散电感及限流电抗器对IGCT关断暂态过电压的影响。数值仿真及试验结果表明,该模型能够较好地反映IGCT关断过程中的暂态特性。 To discuss the turn-off transient behaviours of Integrated Gate-Commutated Thyristor (IGCT), the mathematic model of the turn-off transient current through IGCT is established in this paper based on the experimental results. Then, the method of studying the turn-off transient behavior of IGCT using differential equations is proposed. For confirming the method's efficiency, the turn-off transient mathematical model based on the chopper circuit is developed according to the proposed mathematic model of the turn-off transient current through IGCT, in which the RC-snubbers of IGCT, the stray inductance of chopper circuit and DC-link choke are taken into accounts. The mathematic simulations and experimental results show that the model proposed in this paper can give a good description of the turn-off transient behaviors of IGCT.
出处 《中国电机工程学报》 EI CSCD 北大核心 2007年第7期103-107,共5页 Proceedings of the CSEE
基金 新世纪优秀人才支持计划项目 教育部优秀青年教师计划项目
关键词 集成门极换流晶闸管 斩波电路 阻容吸收 杂散电感 暂态特性 integrated gate commatated thyristor chopper rc-snubbers stray inductance transient behaviors
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参考文献17

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