摘要
本文用富里叶红外光谱及Ｘ射线衍射对在氢氟酸中电解硅片时形成的多孔硅膜进行了分析，发现除了硅以外，其中还有晶态的二氧化硅（鳞石英）存在，由此说明多孔硅表面的硅氧化合物并非都是样品制备后在大气中氧化造成的，它对多孔硅发光有很大的关系．
hotoluminescence porous silicon film formed during electrochemical dissolution of siliconwafer in HF solution was studied by Fourier transform infra-red spectroscopy and X--raydiffractiometer. ResultS from these two techniques show that there exists crystalline silicon dioxide inthe film except single crystalline silicon. Thus it is beleived that some of the silicon chide on thephotoluminescence porous silicon is formed during the electrochemical process rather than formed inthe ambient atmosphere after sample preparation. Silicon oxide palys an important role in thephotoluminescence from porous silicion.
基金
国家自然科学基金
