摘要
利用ＭＢＥ生长的ＧａＡｓ／ＡｌｘＧａ１－ｘＡｓ折射率渐变－分别限制－多量子阱材料（ＧＲＩＮ－ＳＣＨ－ＭＱＷ），经液相外延二次掩埋生长，制备了阈值最低达２．５ｍＡ（腔面未镀膜），光功率室温连续输出可达１５ｍＷ／面的半导体激光器．经腔面镀膜后，器件已稳定工作４５００多小时．
Abstract Using MBE grown GaAs/A1xGa1-xAs MQWs materials, we fabricated the MQWs BH(Buried Heterostructure) laser diodes by LPE growth. The lowest threshold current is 2. 5m A(uncoated), the output power is up to 15kW/facet. In our aging test (constant output power ), we used two laser diods (one was coated; the other was uncoated),the coated lasers have worked for 4500 hours without obvious increase in driving current.
基金
863高技术资助
