摘要
本文采用固相外延法在ＳＩＭＯＸ衬底上生长了β－ＦｅＳｉ２薄膜，采用Ｘ射线衍射（ＸＲＤ），卢瑟辐背散射（ＲＢＳ）以及自动扩展电阻测量研究了样品的多层结构，Ｒａｍａｎ谱表征说明它与直接在硅片上生长的薄膜具有类似的晶格振动特性．
Abstract Novel structure β-Fe Si2/SIMOX has been successfully fabricated by solid phase epitaxy. X-rays diffraction, Rutherford backscattering spectroscopy and automatic spreading resistance measurements have been employed to detect the formation mechanism and microstructure. Raman characterization reveals that the as-formed film exhibits the same lattice vibration properties as that grown on bulk silicon wafer.
基金
上海市自然科学基金
