摘要
用ＡｒＦ脉冲准分子激光在ＳＯＩ和Ｐｔ／ＳＯＩ衬底上沉积了Ｐｂ（Ｚｒ，Ｔｉ）Ｏ＿３铁电薄膜，并用快速退火进行热处理。ｘ射线衍射、卢瑟辐背散射等分析表明：所结晶的薄膜是以（１００）和（１１０）为主要取向的多晶膜，且结晶情况与热处理温度和时间密切相关；ＰＺＴ薄膜呈现铁电性，其剩余极化Ｐｒ＝１５μｃ／ｃｍ￣２，矫顽电场Ｅｃ＝５０ｋＶ／ｃｍ；并且具有较高的介电常数和较高的电阻率。
Ferroelectric Pb(Zr,Ti )O_3 thin films were prepared by pulsed excimer laser deposition on SOI(Si-on-Insulator)and Pt-coated SOI substrates. Rapid thermal annealing was performed to crystallizethe thin films.Based on the analysis by X-ray diffraction, Rutherford backscattering spectroscopy andelectrical properties measurements,the films were revealed of to be polycrystalline perovskite struc-ture with mainly<100> and < 110> orientations,have a high resistivity and dielectric constant. ThePZT thin films on Pt/SOI showed a remanent polarization of 15μc/cm￣2 and a coercive field of 50kV/cm.
出处
《功能材料与器件学报》
CAS
CSCD
1995年第2X期93-98,共6页
Journal of Functional Materials and Devices
关键词
PZT
铁电薄膜
脉冲激光沉积
快速退火
PZT
ferroelectric thin film
laser ablation
rapid thermal annealingPACC:8115 7780 7340Q
