摘要
半导体瞬态问题的数学模型是由四个方程组成的非线性偏微分方程组的初边值问题所决定．其中电子浓度和空穴浓度方程往往是对流占优扩散问题,普通的方法已不适用,为此本文用迎风格式处理对流项部分,提出一种全离散迎风有限体积元方法,并进行收敛性分析,在最一般的情况下得到了一阶精度L2模误差估计结果．
The mathematical model of the semiconductor device with heat conduction is described by the initial boundary value problem made up of a system of four quasi- linear partial differential equations. The general methods are not useful to deal with this problem when the the equations of the electron and hole concentration are convection-dominated. So a kind of uowind finite volume element methnds for the problem is given, which is used upwind scheme to deal with the convection part. One order accuracy error estimate in L^2-norm is obtained.
出处
《计算数学》
CSCD
北大核心
2007年第1期27-38,共12页
Mathematica Numerica Sinica
基金
国家重点基础研究专项经费(G1999032803)
国家自然科学基金(10372052
10271066)
教育部博士点基金资助项目(20030422047)
关键词
热传导型
迎风格式
有限体积元方法
误差估计
heat conduction, upwind scheme, finite volume element methods, error estimates
