摘要
随着ＭＯＳ器件尺寸的缩小，“鸟嘴区”对窄沟器件的电学特性已产生了明显的影响．本文研究了窄沟器件（Ｗ＝１．２μｍ，２μｍ）中“鸟嘴区”引起的栅电压对有效沟道宽度调制效应以及“鸟嘴”区域内载流子有效迁移率的变化规律，并对窄沟器件模型提出了修正公式．
Abstract In the narrow gate MOS device, the effective channel width modulation by gate voltage and the effective mobility of the carrier in the bird's beak have been studied, and an improved model is provided.
