摘要
本文改进和发展了硅中二维离子注入、离子注入退火及高剂量氧注入分布模型;处理了多次注入、多层掩蔽、多种材料掩蔽及多种掩模边缘;在此基础上给出了适用于VLSI工艺的多功能、实用化二维离子注入模拟器FUTIS。通过与其它工艺模型、模拟器及实验比较,表明FUTIS在精度上有明显改进,在功能上有很大扩展,是一种能适应当今VLSI工艺发展要求的先进的离子注入模拟器。
The improved 2D ion implantation model, annealing model and oxygen ion implantation model are presented. On the basis of dealing with multi-layer mask, various mask materials and numerious mask edges, a multi-function 2D ion implantation simulator-FUTIS has been developed for VLSI processes. As compared with other process models, simulators and experiments, it is shown that the accuracy of FUTIS has been obviously improved and the function has been considerably extended. FUTIS is an advanced ion inplantation simulator which can fit for the development of the current VLSI processes.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1990年第6期14-19,共6页
Acta Electronica Sinica
基金
国家自然科学基金
