摘要
The films of Ge and Si were grown on the substrate Si (100) by magnetron sputtering at 2.5 Pa Ar pressure.The growth temperature of films was 100℃,250℃,400℃and 550℃.The structure and composition were analysised by Raman scattering.The poly-crystal peak and crystal peak of Ge were observed in these films.The results indicate that the single crystal film of Ge was prepared at the substrate temperature of 400℃.The peak of acoustic phonons of Ge was 98 cm^(-1) and that of Si was 170 cm^(-1).
The films of Ge and Si were grown on the substrate Si （100） by magnetron sputtering at 2.5 Pa Ar pressure. The growth temperature of films was 100℃, 250℃, 400℃ and 550℃. The structure and composition were analysised by Raman scattering. The poly-crystal peak and crystal peak of Ge were observed in these films. The results indicate that the single crystal film of Ge was prepared at the substrate temperature of 400℃. The peak of acoustic phonons of Ge was 98 cmt and that of Si was 170 cm^2.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2006年第A03期564-566,共3页
Rare Metal Materials and Engineering
基金
supported by the National Natural Science Foundation of China(No.60272001)
the Beijing Natural Science Foundation of China(No.4032010)
the Yunnan Natural Province Science Foundation of China(Youth Foundation:No.K1010265)
