摘要
将PECVD方法制备的多层a-Si∶H/a-SiN_x∶H膜在N_2气氛中进行不同温度的退火处理后,利用红外吸收谱、核反应方法,次级离子质谱(SIMS)和透射电镜(TEM)对膜中氢从表面渗出及其与温度的依赖关系进行了测试和分析。最后对氢的外扩散现象提出了几种可能的简单解释。
The hydrogen effusion and its temperature dependence in semiconducting amorphous a-si:H/a-SiN,:H multilayer films prepared by PECVD has been studied using IR absorption, nuclear reaction method, SIMS and TEM. Some possible interpretations are presented for out-diffusion of hydrogen in the films.
关键词
非晶硅
多层膜
氢含量
退火处理
Amorphous silicon
Multilayer films
Annealig treatment
Out-diffusion of hydrogen
