摘要
BiFeO3 (BFO) thin films were prepared on Pt(111)/TiO2/SiO2/Si(100) substrates by the pulsed-laser deposition (PLD) technique at a low temperature of 450℃. The XRD results indicate that the BFO thin films are of perovskite structure with the presence of small amount of second phases. The oxygen pressures have great effect on the crystalline structures and dielectric properties of BFO thin films. The dielectric constant of the BFO thin films decreases with increasing oxygen pressures, achieving 186, 171 and 160 at the frequency of 104 Hz for the oxygen pressures of 0.666, 1.333 and 13.332 Pa, respectively. The BFO thin films prepared at the oxygen pressure of 0.666 Pa reveal a saturated hysteresis loop with the remanent polarization of 7.5 μC/cm2 and the coercive field of 176 kV/cm.
BiFeO3 （BFO） thin films were prepared on Pt（111）/TiO2/SiO2/Si（100） substrates by the pulsed-laser deposition （PLD） technique at a low temperature of 450℃. The XRD results indicate that the BFO thin films are of perovskite structure with the presence of small amount of second phases. The oxygen pressures have great effect on the crystalline structures and dielectric properties of BFO thin films. The dielectric constant of the BFO thin films decreases with increasing oxygen pressures, achieving 186, 171 and 160 at the frequency of 104 Hz for the oxygen pressures of 0.666, 1.333 and 13.332 Pa, respectively. The BFO thin films prepared at the oxygen pressure of 0.666 Pa reveal a saturated hysteresis loop with the remanent polarization of 7.5 ℃/cm^2 and the coercive field of 176 kV/cm.
出处
《中国有色金属学会会刊：英文版》
CSCD
2006年第B01期123-125,共3页
Transactions of Nonferrous Metals Society of China
基金
Project (50472098) supported by the National Natural Science Foundation of China
关键词
BIFEO3
薄膜
脉冲激光沉积法
制备
结构
介电性质
BiFeO3 thin films
Pt（111）/TiO2/SiO2/Si（100） substrates
PLD
structural and dielectric properties
