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Influence of rapid thermal process on intrinsic gettering in fast neutron irradiated Czochralski silicon

Influence of rapid thermal process on intrinsic gettering in fast neutron irradiated Czochralski silicon
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摘要 A rapid thermal process (RTP) was first introduced into the intrinsic gettering (IG) processes of fast neutron irradiated Czochralski (CZ) silicon. The effect of RTP conditions on bulk microdefects (BMDs) and denuded zone (DZ) was investigated. Fourier transform infrared absorption spectrometer (FTIR) was used to measure the concentration of interstitial oxygen ([Oi]). Bulk microdefects were observed by optical microscope. The results show that, according to the variation of [Oi], it is found that RTP doesn’t change the processes of oxygen precipitation in fast neutron irradiated Czochralski silicon. Perfect denuded zone, dense oxygen precipitates and defects form in the bulk of irradiated samples. With increasing temperature of RTP, the width of denuded zone decreases. Increasing RTP cooling rate, the density of Bulk microdefects increases. DZ forms in the sample that annealed in nitrogen atmosphere. A rapid thermal process （RTP） was first introduced into the intrinsic gettering （IG） processes of fast neutron irradiated Czochralski （CZ） silicon. The effect of RTP conditions on bulk microdefects （BMDs） and denuded zone （DZ） was investigated. Fourier transform infrared absorption spectrometer （FTIR） was used to measure the concentration of interstitial oxygen （[Ot]）. Bulk microdefects were observed by optical microscope. The results show that, according to the variation of [Oil, it is found that RTP doesn＇t change the processes of oxygen precipitation in fast neutron irradiated Czochralski silicon. Perfect denuded zone, dense oxygen precipitates and defects form in the bulk of irradiated samples. With increasing temperature of RTP, the width of denuded zone decreases. Increasing RTP cooling rate, the density of Bulk microdefects increases. DZ forms in the sample that annealed in nitrogen atmosphere.
作者 陈贵锋 李养贤 李兴华 蔡莉莉 马巧云 牛萍娟 牛胜利 陈东风
机构地区 School of Materials Science and Engineering School of Science School of Information and Communication China Institute of Atomic Energy
出处 《中国有色金属学会会刊：英文版》 CSCD 2006年第B01期109-112,共4页 Transactions of Nonferrous Metals Society of China
基金 Project (50472034) supported by the National Natural Science Foundation of China Project(E2005000048) supported by the Natural Science Foundation of Hebei Province, China Project(20050080006) supported by the Specialized Research Fund for the Doctoral Program of Higher Education, China
关键词 快速热合成法 快中子辐照直拉硅 FTIR 内部去疵法 硅单晶 neutron irradiation Czochralski silicon intrinsic gettering FTIR
分类号 TN304 [电子电信—物理电子学]
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参考文献10

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中国有色金属学会会刊：英文版
2006年 第B01期

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