摘要
求解泊松方程和电子与空穴的连续性方程以计算横向绝缘栅双极晶体管(LIGBT)电压电流关系,获得在加有 p^+ 短路槽和 p^-/p^+ 衬底等结构下的伏安特性和正向电压值以及载流子寿命对它们的影响。计算在 MOS 管衬底区域的纵向和横向分布电子电导和空穴电导,发现电子电导与阳极电流具有相似的负阻特性。文中还对求解的 DN 法和 NR 法进行了讨论。
Poisson's and continuity equations for electrons and holes of LIGBTmapping from the nonlinear system are solved with damped-Newton and NRschemes and the voltage-current characteristics and on-state voltage are calculated inthe paper.The effects of lifetime of carrier on the characteristics for three structuresare also discussed.The values of the lateral and vertical distribution conductivitiesfor electrons and holes in the substrate of n-MOS are given.The results of the mod-els predict that for equal breakdown voltage and on-state voltage an optimized devicewith p^+—sinker and p^-/p^+ substrate have the greater maximum controlled anodecurrent.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1990年第3期296-301,共6页
Journal of University of Electronic Science and Technology of China
基金
国家七.五攻关项目
关键词
绝缘
双极晶体管
电压
电流
insulated-gate bipolar transistor
Poisson's equation
continuiry equation
Numerical analysis
