摘要
本文用 damped-Newton(DN)法求解由一般非线性方程获得的Poisson 方程。研究了阻尼因子λ对其收敛性和求解效率的影响。利用此方法计算了横向表面掺杂为 Gauss 分布的器件的归一化电场与掺杂浓度和掺杂层宽度的关系。
The Poisson's equation from nonlinear system equation is solved with damped-Newton algorithm.The influence of damping factor λ on the convergence and solving efficiency is studied.The relations of the norma- lization maximum field fo to concentration and widths of the incident doping for the device with variation of lateral doping are calculated with the algorithm above.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1989年第4期362-367,共6页
Journal of University of Electronic Science and Technology of China
基金
获得国家"七五"科技攻关项目的支持
关键词
半导体
功率器件
电场
数值分析
numerical analysis
power semiconductor device
electric field profile
