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低能氦离子注入引入的量子阱混杂带隙波长蓝移 被引量:3

Low Energy Helium Ion Implantation Induced Quantum-Well Intermixing
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摘要 提出了采用低能氦离子注入多量子阱(MQW)材料和合适的快速退火条件,实现了MQW带隙波长的蓝移.用这种材料制作了FP腔激光器,与未注入器件相比,实现了37nm的激射波长蓝移. Low energy helium ion implantation into InP heterostructures that induces controlled quantum well intermixing is reported and used for the first time. A significant blue-shift enhanced by a moderate RTA process is achieved. An intermixed FP laser is fabricated. Compared to the unimplanted laser,the lasing wavelength of the intermixed laser blue-shifts by 37nm.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第1期47-51,共5页 半导体学报(英文版)
基金 国家自然科学基金资助项目(批准号:90401025和60476009)~~
关键词 He^+离子注入 低能量 量子阱混杂 蓝移 FP腔激光器 helium ion implantation low energy quantum well intermixing blue-shift FP laser
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