摘要
详细分析了阶跃恢复二极管(SRD)阶跃电压的产生过程和机理,提出了一种新的基于一个非线性电容和PN二极管并联的SRD模型。利用此模型对窄脉冲产生电路进行了仿真,分析了影响窄脉冲特性的主要因素,并从硬件上实现了窄脉冲仿真电路。经试验测试,脉冲宽度为230 ps、幅度为3.3 V时与仿真结果较吻合,验证了该模型的正确性。
The step voltage generation process and mechanism in the step recovery diode（SRD） were analyzed and a new SRD model was proposed based on the parallel connection of a nonlinear capacitance and a PN diode. A short pulse generation circuit was simulated by the proposed model, the major parameters affecting the short pulse characteristics were studied, and the hardware of the circuit was realized. The measured pulse width was 230 ps and the measured pulse voltage was 3.3 V, both were in good agreement with the simulated results, thus verified the proposed model.
出处
《吉林大学学报（工学版）》
EI
CAS
CSCD
北大核心
2007年第1期173-176,共4页
Journal of Jilin University:Engineering and Technology Edition
基金
中国人民解放军总装备部预研项目(4200107020)
关键词
半导体技术
窄脉冲
阶跃恢复二极管
建模
semiconductor
short pulse
step recovery diode （SRD）
modeling
