摘要
本文提出运电容分压原理来解决α-Si:H MOSFET 栅压φ<sub>GS</sub>与表面电势φ<sub>S</sub> 关系的新方法,分析其转移特性和输出特性,唯象地解释了“积累”工作模式的源漏电流饱和现象.根据理论分析,设计并制出α-Si:H MOS FET 样品,测试结果表明理论与实验能较好吻合.
The new way is advanced to obtain the relation of gate electronic potential φGs and saface electronic potential φGs by the principle of capacitive divider,and the static characteristics of α-Si:H MOS FET are analyzed under this new way.The reason of the drain current saturation is explained on the concept of physics.Under the theoretical analy- sis,the samples of α-Si:H MOS FET are made and tested.The experimental date is qualitativaly in good agreement with theoretical results.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1989年第5期468-474,共7页
Journal of University of Electronic Science and Technology of China
关键词
A-SI:H
FET
电容分压原理
验证
amorphous hydrogenated silicon
energy band
Lacalized state
field effect transistor
principle of capacitive divider
