摘要
以三氯硅烷和氨气作为硅源和氮源,利用低压化学气相沉积工艺(LPCVD)在烧结氮化硅表面制备氮化硅薄膜。考察了工艺参数对沉积速率的影响,并对薄膜的组成、结构及硬度等性能进行了分析。结果表明,当载气为N2或N2+H2、沉积温度为800℃、NH3/HSiCl3流量比为4时是较佳的工艺条件,此时薄膜沉积速率可达23·4nm/min,其膜层主要由Si-N组成,并含有部分Si-O,硬度为HV2865。
In this paper, preparation of silicon nitride by trichlorosilane and ammonia as raw materials, via low pressure chemical vapor deposition (LPCVD) process is investigated. The influencing parameters on deposition rate are investigated, and the composition and structure of as-deposited films are characterized by IR, XRD and hardness measurement. The process parameters, including carrying gas, ratio of raw materials and deposition temperature, exert great influences on deposition rate, and the optimum parameters are as following: nitrogen or nitrogen/hydrogen as carrying gas, deposition temperature at 800 ℃, ratio of NH_3/HSiCl_3 at 4. The maximum deposition rate is 23.4 nm/min. The results show that the film is composed of mainly Si-N, and some Si-O, and the hardness of that is 2865HV.
出处
《新技术新工艺》
2006年第11期36-38,共3页
New Technology & New Process
关键词
氮化硅薄膜
CVD沉积速率
化学组成
silicon nitride thin film, CVD, deposition rate, chemical composition
